RGWS60TS65DGC13 Rohm Semiconductor

Description: IGBT TRNCH FIELD 650V 51A TO247G, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 88 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: TO-247G, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 32ns/91ns, Switching Energy: 500µJ (on), 450µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 58 nC, Current - Collector (Ic) (Max): 51 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 156 W.