RH7E04BBJFRATCB Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: PCH -30V -40A, DFN3333T8LSAB, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 15 V
Qualification: AEC-Q101
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Технічний опис RH7E04BBJFRATCB Rohm Semiconductor
Description: PCH -30V -40A, DFN3333T8LSAB, PO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 2.2mA, Supplier Device Package: DFN3333T8LSAB, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +5V, -20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 15 V, Qualification: AEC-Q101.
Інші пропозиції RH7E04BBJFRATCB за ціною від 44.70 грн до 148.34 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RH7E04BBJFRATCB | ROHM |
Description: ROHM - RH7E04BBJFRATCB - Leistungs-MOSFET, p-Kanal, 30 V, 40 A, 7500 µohm, DFN3333, Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR isCanonical: N hazardous: false Drain-Source-Durchgangswiderstand: 7500µohm rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (25-Jun-2025) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RH7E04BBJFRATCB | Rohm Semiconductor |
Description: PCH -30V -40A, DFN3333T8LSAB, PO Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 2.2mA Supplier Device Package: DFN3333T8LSAB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| RH7E04BBJFRATCB |
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Виробник: ROHM
Description: ROHM - RH7E04BBJFRATCB - Leistungs-MOSFET, p-Kanal, 30 V, 40 A, 7500 µohm, DFN3333, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
Drain-Source-Durchgangswiderstand: 7500µohm
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (25-Jun-2025)
Description: ROHM - RH7E04BBJFRATCB - Leistungs-MOSFET, p-Kanal, 30 V, 40 A, 7500 µohm, DFN3333, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
Drain-Source-Durchgangswiderstand: 7500µohm
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (25-Jun-2025)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 79.09 грн |
| 500+ | 61.85 грн |
| 1000+ | 50.81 грн |
| RH7E04BBJFRATCB |
|
Виробник: Rohm Semiconductor
Description: PCH -30V -40A, DFN3333T8LSAB, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 15 V
Qualification: AEC-Q101
Description: PCH -30V -40A, DFN3333T8LSAB, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 15 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 148.34 грн |
| 10+ | 91.46 грн |
| 100+ | 62.10 грн |
| 500+ | 46.49 грн |
| 1000+ | 44.70 грн |