RH7G04CBJFRATCB Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.3mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 143.76 грн |
| 10+ | 88.45 грн |
| 100+ | 59.70 грн |
| 500+ | 44.48 грн |
| 1000+ | 41.72 грн |
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Технічний опис RH7G04CBJFRATCB Rohm Semiconductor
Description: PCH -40V -40A, DFN3333T8LSAB, PO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V, Power Dissipation (Max): 62W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1.3mA, Supplier Device Package: DFN3333T8LSAB, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +5V, -20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V, Qualification: AEC-Q101.
Інші пропозиції RH7G04CBJFRATCB
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RH7G04CBJFRATCB | Виробник : Rohm Semiconductor |
Description: PCH -40V -40A, DFN3333T8LSAB, PO Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1.3mA Supplier Device Package: DFN3333T8LSAB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
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RH7G04CBJFRATCB | Виробник : ROHM Semiconductor |
MOSFETs Pch -40V -40A, DFN3333T8LSAB, Power MOSFET for Automotive |
товару немає в наявності |