RH7G04CBKFRATCB Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 350µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 42.56 грн |
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Технічний опис RH7G04CBKFRATCB Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, Power Dissipation (Max): 62W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 350µA, Supplier Device Package: DFN3333T8LSAB, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 20 V, Qualification: AEC-Q101.
Інші пропозиції RH7G04CBKFRATCB за ціною від 44.93 грн до 152.00 грн
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RH7G04CBKFRATCB | Виробник : Rohm Semiconductor |
Description: NCH 40V 40A, DFN3333T8LSAB, POWE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 350µA Supplier Device Package: DFN3333T8LSAB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RH7G04CBKFRATCB | Виробник : ROHM Semiconductor |
MOSFETs Nch 40V 40A, DFN3333T8LSAB, Power MOSFET for Automotive |
товару немає в наявності |