RJ1L08CGNTLL Rohm Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 82+ | 173.09 грн |
| 85+ | 166.50 грн |
| 100+ | 160.84 грн |
| 250+ | 150.39 грн |
| 500+ | 135.47 грн |
Відгуки про товар
Написати відгук
Технічний опис RJ1L08CGNTLL Rohm Semiconductor
Description: MOSFET N-CH 60V 80A LPTL, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Ta), Rds On (Max) @ Id, Vgs: 7.7mOhm @ 80A, 10V, Power Dissipation (Max): 96W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 50µA, Supplier Device Package: LPTL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V.
Інші пропозиції RJ1L08CGNTLL за ціною від 173.19 грн до 199.93 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
RJ1L08CGNTLL | Rohm Semiconductor |
 Description: MOSFET N-CH 60V 80A LPTLPackaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 80A, 10V Power Dissipation (Max): 96W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 50µA Supplier Device Package: LPTL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V |
на замовлення 48 шт: термін постачання 21-31 дні (днів) |
|
||||
 |
RJ1L08CGNTLL | ROHM Semiconductor |
MOSFETs RJ1G08CGN is a power MOSFET with low-on resistance and High power small mold package, suitable for switching. |
на замовлення 1890 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| RJ1L08CGNTLL |
|
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 80A LPTL
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 80A, 10V
Power Dissipation (Max): 96W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 50µA
Supplier Device Package: LPTL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V
Description: MOSFET N-CH 60V 80A LPTL
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 80A, 10V
Power Dissipation (Max): 96W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 50µA
Supplier Device Package: LPTL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V
на замовлення 48 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.93 грн |
| 10+ | 173.19 грн |
| RJ1L08CGNTLL |
|
Виробник: ROHM Semiconductor
MOSFETs RJ1G08CGN is a power MOSFET with low-on resistance and High power small mold package, suitable for switching.
MOSFETs RJ1G08CGN is a power MOSFET with low-on resistance and High power small mold package, suitable for switching.
на замовлення 1890 шт:
термін постачання 21-30 дні (днів)