RJH65T04BDPM-A0#T2

RJH65T04BDPM-A0#T2 Renesas Electronics Corporation


Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 650V 60A TO3PFP
Packaging: Tube
Package / Case: SC-94
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 30A
Supplier Device Package: TO-3PFP
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/125ns
Switching Energy: 360µJ (on), 350µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 74 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 65 W
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Технічний опис RJH65T04BDPM-A0#T2 Renesas Electronics Corporation

Description: IGBT TRENCH 650V 60A TO3PFP, Packaging: Tube, Package / Case: SC-94, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 80 ns, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 30A, Supplier Device Package: TO-3PFP, IGBT Type: Trench, Td (on/off) @ 25°C: 35ns/125ns, Switching Energy: 360µJ (on), 350µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 74 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 65 W.

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RJH65T04BDPM-A0#T2 RJH65T04BDPM-A0#T2 Виробник : Renesas Electronics r07ds1366ej0200_rjh65t04bdpma0-2930570.pdf IGBT Transistors POWER TRS1
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