RJK005N03T146 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 500MA SMT3
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 580mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.39 грн |
| 6000+ | 6.53 грн |
| 9000+ | 6.23 грн |
| 15000+ | 5.53 грн |
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Технічний опис RJK005N03T146 Rohm Semiconductor
Description: MOSFET N-CH 30V 500MA SMT3, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: SMT3, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Power Dissipation (Max): 200mW (Ta), Rds On (Max) @ Id, Vgs: 580mOhm @ 500mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції RJK005N03T146 за ціною від 7.75 грн до 27.18 грн
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RJK005N03T146 | Rohm Semiconductor |
Description: MOSFET N-CH 30V 500MA SMT3 Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: SMT3 Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 580mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
на замовлення 16238 шт: термін постачання 21-31 дні (днів) |
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| RJK005N03T146 |
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на замовлення 3000 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| RJK005N03T146 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 500MA SMT3
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 580mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 30V 500MA SMT3
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 580mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 16238 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.18 грн |
| 18+ | 17.43 грн |
| 100+ | 11.78 грн |
| 500+ | 8.57 грн |
| 1000+ | 7.75 грн |