RJK0301DPB-02#J0 Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 60A 5LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
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Технічний опис RJK0301DPB-02#J0 Renesas Electronics Corporation
Description: MOSFET N-CH 30V 60A 5LFPAK, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V, Power Dissipation (Max): 65W (Tc), Supplier Device Package: LFPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +16V, -12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V.
Інші пропозиції RJK0301DPB-02#J0
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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RJK0301DPB-02#J0 | Renesas Electronics Corporation |
Description: MOSFET N-CH 30V 60A 5LFPAK Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +16V, -12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
RJK0301DPB-02#J0 | Renesas Electronics |
MOSFET POWER TRANSISTOR LV MOS, 30V, LFPAK |
товару немає в наявності |
В кошику од. на суму грн. |
| RJK0301DPB-02#J0 |
|
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 60A 5LFPAK
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Description: MOSFET N-CH 30V 60A 5LFPAK
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
товару немає в наявності
В кошику
од. на суму грн.
| RJK0301DPB-02#J0 |
|
Виробник: Renesas Electronics
MOSFET POWER TRANSISTOR LV MOS, 30V, LFPAK
MOSFET POWER TRANSISTOR LV MOS, 30V, LFPAK
товару немає в наявності
В кошику
од. на суму грн.