RJK0301DPB-WS#J0 Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 60A 5LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: LFPAK
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
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Технічний опис RJK0301DPB-WS#J0 Renesas Electronics Corporation
Description: MOSFET N-CH 30V 60A 5LFPAK, Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +16V, -12V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: LFPAK, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 65W (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Інші пропозиції RJK0301DPB-WS#J0
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| RJK0301DPB-WS#J0 | Виробник : Renesas Electronics | Renesas Electronics |
товару немає в наявності |