Технічний опис RJK0305DPB-02#J0 Renesas
Description: MOSFET N-CH 30V 30A LFPAK, Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +16V, -12V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: LFPAK, Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Інші пропозиції RJK0305DPB-02#J0
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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RJK0305DPB-02#J0 | Renesas Electronics Corporation |
Description: MOSFET N-CH 30V 30A LFPAK Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +16V, -12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
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|
RJK0305DPB-02#J0 | Renesas Electronics Corporation |
Description: MOSFET N-CH 30V 30A LFPAK Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V Supplier Device Package: LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 10 V |
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В кошику од. на суму грн. |
 |
RJK0305DPB-02#J0 | Renesas Electronics |
 MOSFET Power MOSFET |
товару немає в наявності |
В кошику од. на суму грн. |
| RJK0305DPB-02#J0 |
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 30A LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 30A LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| RJK0305DPB-02#J0 |
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 30A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 10 V
Description: MOSFET N-CH 30V 30A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| RJK0305DPB-02#J0 |
|
Виробник: Renesas Electronics
MOSFET Power MOSFET
MOSFET Power MOSFET
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В кошику
од. на суму грн.