RJK03M1DPA-00#J5A Renesas Electronics America Inc
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 30V 50A 8WPAK
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4720 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: WPAK(3F) (5x6)
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 79.77 грн |
| 6000+ | 73.97 грн |
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Технічний опис RJK03M1DPA-00#J5A Renesas Electronics America Inc
Description: MOSFET N-CH 30V 50A 8WPAK, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 4720 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: WPAK(3F) (5x6), Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ).
Інші пропозиції RJK03M1DPA-00#J5A за ціною від 74.76 грн до 174.35 грн
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RJK03M1DPA-00#J5A | Renesas Electronics America Inc |
Description: MOSFET N-CH 30V 50A 8WPAK Input Capacitance (Ciss) (Max) @ Vds: 4720 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: WPAK(3F) (5x6) Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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RJK03M1DPA-00#J5A | Renesas Electronics |
MOSFETs BEAM2 Series FET 30V WPAK 2.5mOhm |
на замовлення 4904 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| RJK03M1DPA-00#J5A |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 30V 50A 8WPAK
Input Capacitance (Ciss) (Max) @ Vds: 4720 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: WPAK(3F) (5x6)
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 50A 8WPAK
Input Capacitance (Ciss) (Max) @ Vds: 4720 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: WPAK(3F) (5x6)
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 174.35 грн |
| 10+ | 139.39 грн |
| 100+ | 110.96 грн |
| 500+ | 88.11 грн |
| 1000+ | 74.76 грн |
| RJK03M1DPA-00#J5A |
|
Виробник: Renesas Electronics
MOSFETs BEAM2 Series FET 30V WPAK 2.5mOhm
MOSFETs BEAM2 Series FET 30V WPAK 2.5mOhm
на замовлення 4904 шт:
термін постачання 21-30 дні (днів)