RJK03M3DPA-00#J5A Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 40A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 35W (Tc)
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3010 pF @ 10 V
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Технічний опис RJK03M3DPA-00#J5A Renesas Electronics Corporation
Description: MOSFET N-CH 30V 40A 8WPAK, Packaging: Tape & Reel (TR), Package / Case: 8-WFDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V, Power Dissipation (Max): 35W (Tc), Supplier Device Package: 8-WPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3010 pF @ 10 V.
Інші пропозиції RJK03M3DPA-00#J5A за ціною від 54.22 грн до 172.04 грн
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RJK03M3DPA-00#J5A | Renesas Electronics Corporation |
Description: MOSFET N-CH 30V 40A 8WPAK Packaging: Cut Tape (CT) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Power Dissipation (Max): 35W (Tc) Supplier Device Package: 8-WPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3010 pF @ 10 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| RJK03M3DPA-00-J5A | RENESAS | QFN |
на замовлення 135 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| RJK03M3DPA-00#J5A |
|
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 40A 8WPAK
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 35W (Tc)
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3010 pF @ 10 V
Description: MOSFET N-CH 30V 40A 8WPAK
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 35W (Tc)
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3010 pF @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 172.04 грн |
| 10+ | 106.43 грн |
| 100+ | 72.80 грн |
| 500+ | 54.81 грн |
| 1000+ | 54.22 грн |
| RJK03M3DPA-00-J5A |
Виробник: RENESAS
QFN
QFN
на замовлення 135 шт:
термін постачання 14-28 дні (днів)