RJK03M4DPA-00#J5A Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 35A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 17.5A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 10 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 48.29 грн |
| 6000+ | 43.60 грн |
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Технічний опис RJK03M4DPA-00#J5A Renesas Electronics Corporation
Description: MOSFET N-CH 30V 35A 8WPAK, Packaging: Tape & Reel (TR), Package / Case: 8-WFDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 17.5A, 10V, Power Dissipation (Max): 30W (Tc), Supplier Device Package: 8-WPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 10 V.
Інші пропозиції RJK03M4DPA-00#J5A за ціною від 49.06 грн до 168.15 грн
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RJK03M4DPA-00#J5A | Renesas Electronics Corporation |
Description: MOSFET N-CH 30V 35A 8WPAK Packaging: Cut Tape (CT) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 17.5A, 10V Power Dissipation (Max): 30W (Tc) Supplier Device Package: 8-WPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 10 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| RJK03M4DPA-00#J5A |
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Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 35A 8WPAK
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 17.5A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 10 V
Description: MOSFET N-CH 30V 35A 8WPAK
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 17.5A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 168.15 грн |
| 10+ | 104.10 грн |
| 100+ | 70.99 грн |
| 500+ | 53.34 грн |
| 1000+ | 49.06 грн |