RJK0454DPB-00#J5 Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 40A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 251.84 грн |
| 10+ | 157.67 грн |
| 100+ | 109.71 грн |
| 500+ | 83.74 грн |
| 1000+ | 77.57 грн |
Відгуки про товар
Написати відгук
Технічний опис RJK0454DPB-00#J5 Renesas Electronics Corporation
Description: MOSFET N-CH 40V 40A LFPAK, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: LFPAK, Power Dissipation (Max): 55W (Tc), Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Інші пропозиції RJK0454DPB-00#J5
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
RJK0454DPB-00#J5 | Renesas Electronics Corporation |
Description: MOSFET N-CH 40V 40A LFPAKInput Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: LFPAK Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
|
RJK0454DPB-00#J5 | Renesas Electronics |
MOSFET JET Series MOSFET, 40V, LFPAK, Pb-F, HF |
товару немає в наявності |
В кошику од. на суму грн. |
| RJK0454DPB-00#J5 |
![]() |
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 40A LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LFPAK
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 40A LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LFPAK
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RJK0454DPB-00#J5 |
![]() |
Виробник: Renesas Electronics
MOSFET JET Series MOSFET, 40V, LFPAK, Pb-F, HF
MOSFET JET Series MOSFET, 40V, LFPAK, Pb-F, HF
товару немає в наявності
В кошику
од. на суму грн.



