RJK0456DPB-00#J5 Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 50A LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LFPAK
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
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Технічний опис RJK0456DPB-00#J5 Renesas Electronics Corporation
Description: MOSFET N-CH 40V 50A LFPAK, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: LFPAK, Power Dissipation (Max): 65W (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Інші пропозиції RJK0456DPB-00#J5
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
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RJK0456DPB-00#J5 | Renesas Electronics Corporation |
Description: MOSFET N-CH 40V 50A LFPAK Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V Power Dissipation (Max): 65W (Tc) Supplier Device Package: LFPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
 |
RJK0456DPB-00#J5 | Renesas Electronics |
MOSFET JET Series MOSFET, 40V, LFPAK, Pb-F, HF |
на замовлення 1500 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| RJK0456DPB-00#J5 |
|
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 50A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Description: MOSFET N-CH 40V 50A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| RJK0456DPB-00#J5 |
|
Виробник: Renesas Electronics
MOSFET JET Series MOSFET, 40V, LFPAK, Pb-F, HF
MOSFET JET Series MOSFET, 40V, LFPAK, Pb-F, HF
на замовлення 1500 шт:
термін постачання 21-30 дні (днів)