RJK0601DPN-E0#T2 Renesas

Description: RJK0601DPN - N-CHANNEL MOSFET 60, Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220ABS, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 200W (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 55A, 10V, Current - Continuous Drain (Id) @ 25°C: 110A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk.