RJK0603DPN-E0#T2 Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 80A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Технічний опис RJK0603DPN-E0#T2 Renesas Electronics Corporation
Description: MOSFET N-CH 60V 80A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220AB, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції RJK0603DPN-E0#T2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| RJK0603DPN-E0#T2 | Виробник : Renesas Electronics |
MOSFET Power MOSFET |
товару немає в наявності |