| Кількість | Ціна |
|---|---|
| 3+ | 123.55 грн |
| 10+ | 111.37 грн |
| 100+ | 90.57 грн |
| 500+ | 87.79 грн |
| 1000+ | 84.30 грн |
| 2500+ | 82.91 грн |
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Технічний опис RJK0656DPB-00#J5 Renesas Electronics
Description: MOSFET N-CH 60V 40A LFPAK, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: LFPAK, Power Dissipation (Max): 65W (Tc), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Інші пропозиції RJK0656DPB-00#J5
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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RJK0656DPB-00#J5 | Виробник : Renesas Electronics Corporation |
Description: MOSFET N-CH 60V 40A LFPAKInput Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: LFPAK Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
товару немає в наявності |
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RJK0656DPB-00#J5 | Виробник : Renesas Electronics Corporation |
Description: MOSFET N-CH 60V 40A LFPAKPackaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V Power Dissipation (Max): 65W (Tc) Supplier Device Package: LFPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V |
товару немає в наявності |

