RJK1001DPP-A0#T2 Renesas Electronics
| Кількість | Ціна |
|---|---|
| 1+ | 520.22 грн |
| 10+ | 374.98 грн |
| 100+ | 258.48 грн |
| 500+ | 207.62 грн |
Відгуки про товар
Написати відгук
Технічний опис RJK1001DPP-A0#T2 Renesas Electronics
Description: MOSFET N-CH 100V 80A TO220FPA, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220ABA, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 30W (Ta), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole.
Інші пропозиції RJK1001DPP-A0#T2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
RJK1001DPP-A0#T2 | Виробник : Renesas Electronics Corporation |
 Description: MOSFET N-CH 100V 80A TO220FPAPackage / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220ABA Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 30W (Ta) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole |
товару немає в наявності |