RJK1003DPP-A0#T2 Renesas Electronics
| Кількість | Ціна |
|---|---|
| 2+ | 300.75 грн |
| 10+ | 204.31 грн |
| 25+ | 169.30 грн |
| 100+ | 126.80 грн |
| 500+ | 106.60 грн |
| 1000+ | 90.57 грн |
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Технічний опис RJK1003DPP-A0#T2 Renesas Electronics
Description: MOSFET N-CH 100V 50A TO220FPA, Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220ABA, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 25W (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції RJK1003DPP-A0#T2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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RJK1003DPP-A0#T2 | Виробник : Renesas Electronics Corporation |
 Description: MOSFET N-CH 100V 50A TO220FPAInput Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220ABA Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 25W (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
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