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Технічний опис RJK1028DNS-00#J5 Renesas Electronics
Description: ABU / MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V, Power Dissipation (Max): 10W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HWSON (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +12V, -5V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 10 V.
Інші пропозиції RJK1028DNS-00#J5
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
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RJK1028DNS-00#J5 | Renesas Electronics Corporation |
 Description: ABU / MOSFETPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V Power Dissipation (Max): 10W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HWSON (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +12V, -5V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
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RJK1028DNS-00#J5 | Renesas Electronics Corporation |
Description: ABU / MOSFET Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V Power Dissipation (Max): 10W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HWSON (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +12V, -5V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. |
| RJK1028DNS-00#J5 |
|
Виробник: Renesas Electronics Corporation
Description: ABU / MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V
Power Dissipation (Max): 10W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HWSON (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +12V, -5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 10 V
Description: ABU / MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V
Power Dissipation (Max): 10W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HWSON (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +12V, -5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| RJK1028DNS-00#J5 |
|
Виробник: Renesas Electronics Corporation
Description: ABU / MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V
Power Dissipation (Max): 10W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HWSON (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +12V, -5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 10 V
Description: ABU / MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V
Power Dissipation (Max): 10W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HWSON (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +12V, -5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.