RJK1054DPB-00#J5 Renesas Electronics America Inc
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 100V 20A LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис RJK1054DPB-00#J5 Renesas Electronics America Inc
Description: MOSFET N-CH 100V 20A LFPAK, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: LFPAK, Power Dissipation (Max): 55W (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Інші пропозиції RJK1054DPB-00#J5
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
RJK1054DPB-00#J5 | Renesas Electronics America Inc |
Description: MOSFET N-CH 100V 20A LFPAK Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V Power Dissipation (Max): 55W (Tc) Supplier Device Package: LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| RJK1054DPB-00#J5 |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 100V 20A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Description: MOSFET N-CH 100V 20A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)