RJK1535DPE-LE Renesas Electronics Corporation

Description: 40A, 150V, 0.052OHM, N-CHANNEL M, Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: LDPAK, Vgs(th) (Max) @ Id: 4.5V @ 1mA, Power Dissipation (Max): 100W, Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: SC-83, Packaging: Bulk.