RJK2009DPM-00#T0 Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 200V 40A TO3PFM
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PFM
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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Технічний опис RJK2009DPM-00#T0 Renesas Electronics Corporation
Description: MOSFET N-CH 200V 40A TO3PFM, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-3PFM, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Інші пропозиції RJK2009DPM-00#T0
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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RJK2009DPM-00#T0 | Виробник : Renesas Electronics |
MOSFET MOSFET |
товару немає в наявності |