RJK2076DPA-00#J5A Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 200V 20A WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: WPAK(3F) (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Відгуки про товар
Написати відгук
Технічний опис RJK2076DPA-00#J5A Renesas Electronics Corporation
Description: MOSFET N-CH 200V 20A WPAK, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V, Power Dissipation (Max): 65W (Tc), Supplier Device Package: WPAK(3F) (5x6), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V.
Інші пропозиції RJK2076DPA-00#J5A за ціною від 116.73 грн до 266.57 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RJK2076DPA-00#J5A | Renesas Electronics Corporation |
Description: MOSFET N-CH 200V 20A WPAKPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V Power Dissipation (Max): 65W (Tc) Supplier Device Package: WPAK(3F) (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||
|
RJK2076DPA-00#J5A | Renesas Electronics |
MOSFETs POWER TRANSISTOR SINGLE POWER MOSFET |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| RJK2076DPA-00#J5A |
![]() |
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 200V 20A WPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: WPAK(3F) (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 200V 20A WPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: WPAK(3F) (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 266.57 грн |
| 10+ | 191.03 грн |
| 100+ | 135.12 грн |
| 500+ | 116.73 грн |
| RJK2076DPA-00#J5A |
![]() |
Виробник: Renesas Electronics
MOSFETs POWER TRANSISTOR SINGLE POWER MOSFET
MOSFETs POWER TRANSISTOR SINGLE POWER MOSFET
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)



