RJK5012DPP-E0#T2

RJK5012DPP-E0#T2 Renesas Electronics America Inc


rjk5012dpp-e0-datasheet
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 12A TO220FP
Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Power Dissipation (Max): 30W (Tc)
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Технічний опис RJK5012DPP-E0#T2 Renesas Electronics America Inc

Description: MOSFET N-CH 500V 12A TO220FP, Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220FP, Power Dissipation (Max): 30W (Tc).

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RJK5012DPP-E0#T2 RJK5012DPP-E0#T2 Виробник : Renesas Electronics r07ds0561ej0100_rjk5012dpp-1093053.pdf MOSFET Power MOSFET
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