RJK6014DPK-00#T0 Renesas Electronics America Inc

Description: MOSFET N-CH 600V 16A TO3P, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-3P, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 575mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.