RJK6018DPM-00#T1 Renesas Electronics America Inc

Description: MOSFET N-CH 600V 30A TO3PFM, Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-3PFM, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 235mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.