RJK6032DPD-00#J2 Renesas Electronics America Inc

Description: MOSFET N-CH 600V 3A MP3A, Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: MP-3A, Power Dissipation (Max): 40.3W (Tc), Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).