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RJK60S7DPP-E0#T2

RJK60S7DPP-E0#T2 Renesas Electronics Corporation

RNCCS18911-1.pdf?t.download=true&u=5oefqw Виробник: Renesas Electronics Corporation
Description: N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 34.7W (Tc)
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +30V, -20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
на замовлення 46800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
22+971.31 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
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Технічний опис RJK60S7DPP-E0#T2 Renesas Electronics Corporation

Description: N-CHANNEL MOSFET, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V, Power Dissipation (Max): 34.7W (Tc), Supplier Device Package: TO-220FP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): +30V, -20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V.