RJL6012DPE-00#J3 Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 600V 10A 4LDPAK
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-83
Packaging: Tube
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LDPAK
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Технічний опис RJL6012DPE-00#J3 Renesas Electronics Corporation
Description: MOSFET N-CH 600V 10A 4LDPAK, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-83, Packaging: Tube, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: LDPAK.
Інші пропозиції RJL6012DPE-00#J3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| RJL6012DPE-00#J3 | Виробник : Renesas Electronics |
 MOSFET MOSFET |
товару немає в наявності |