Технічний опис RJP020N06FRAT100 ROHM
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3, Mounting: SMD, Drain-source voltage: 60V, Type of transistor: N-MOSFET, Gate-source voltage: ±12V, Kind of package: reel; tape, Case: MPT3, On-state resistance: 0.3Ω, Pulsed drain current: 8A, Power dissipation: 2W, Gate charge: 5nC, Polarisation: unipolar, Drain current: 2A, Kind of channel: enhancement.
Інші пропозиції RJP020N06FRAT100
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| RJP020N06FRAT100 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 Mounting: SMD Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: MPT3 On-state resistance: 0.3Ω Pulsed drain current: 8A Power dissipation: 2W Gate charge: 5nC Polarisation: unipolar Drain current: 2A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| RJP020N06FRAT100 |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Mounting: SMD
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: MPT3
On-state resistance: 0.3Ω
Pulsed drain current: 8A
Power dissipation: 2W
Gate charge: 5nC
Polarisation: unipolar
Drain current: 2A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Mounting: SMD
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: MPT3
On-state resistance: 0.3Ω
Pulsed drain current: 8A
Power dissipation: 2W
Gate charge: 5nC
Polarisation: unipolar
Drain current: 2A
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.