Технічний опис RJP020N06FRAT100 ROHM
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 2A, Power dissipation: 2W, Case: MPT3, Gate-source voltage: ±12V, On-state resistance: 0.3Ω, Mounting: SMD, Kind of channel: enhancement, Pulsed drain current: 8A, Gate charge: 5nC, Kind of package: reel; tape.
Інші пропозиції RJP020N06FRAT100
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| RJP020N06FRAT100 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±12V On-state resistance: 0.3Ω Mounting: SMD Kind of channel: enhancement Pulsed drain current: 8A Gate charge: 5nC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
| RJP020N06FRAT100 |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 8A
Gate charge: 5nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 8A
Gate charge: 5nC
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.