RJP4301APP-M0#T2

RJP4301APP-M0#T2 Renesas Electronics America Inc


rjp4301app-m0-datasheet?language=en Виробник: Renesas Electronics America Inc
Description: IGBT 430V TO200FL
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 10V @ 26V, 200A
Supplier Device Package: TO-220FL
Td (on/off) @ 25°C: 50ns/100ns
Test Condition: 300V, 200A, 30Ohm, 26V
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 430 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 30 W
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис RJP4301APP-M0#T2 Renesas Electronics America Inc

Description: IGBT 430V TO200FL, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 10V @ 26V, 200A, Supplier Device Package: TO-220FL, Td (on/off) @ 25°C: 50ns/100ns, Test Condition: 300V, 200A, 30Ohm, 26V, Part Status: Active, Voltage - Collector Emitter Breakdown (Max): 430 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 30 W.

Інші пропозиції RJP4301APP-M0#T2

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
RJP4301APP-M0#T2 Виробник : Renesas Electronics REN_r07ds0749ej0100_rjp4301app_DST_20120426-1999302.pdf IGBT Transistors Strobe IGBT, 430V, TO-200FL, Lead Free
товар відсутній