| Кількість | Ціна |
|---|---|
| 1+ | 1089.21 грн |
| 10+ | 1042.40 грн |
| 30+ | 650.04 грн |
| 60+ | 542.05 грн |
| 120+ | 473.08 грн |
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Технічний опис RJP65T43DPM-00#T1 Renesas Electronics
Description: IGBT TRENCH 650V 40A TO-3PFM, Power - Max: 68.8 W, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 40 A, Part Status: Active, Gate Charge: 70 nC, Test Condition: 400V, 20A, 10Ohm, 15V, Switching Energy: 170µJ (on), 110µJ (off), Td (on/off) @ 25°C: 30ns/107ns, IGBT Type: Trench, Supplier Device Package: TO-3PFM, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A, Input Type: Standard, Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Інші пропозиції RJP65T43DPM-00#T1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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RJP65T43DPM-00#T1 | Виробник : Renesas Electronics Corporation |
 Description: IGBT TRENCH 650V 40A TO-3PFMPower - Max: 68.8 W Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 40 A Part Status: Active Gate Charge: 70 nC Test Condition: 400V, 20A, 10Ohm, 15V Switching Energy: 170µJ (on), 110µJ (off) Td (on/off) @ 25°C: 30ns/107ns IGBT Type: Trench Supplier Device Package: TO-3PFM Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Input Type: Standard Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |