| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1143.31 грн |
| 10+ | 1094.17 грн |
| 30+ | 682.33 грн |
| 60+ | 568.97 грн |
| 120+ | 496.57 грн |
Товар під замовлення
Немає на нашому складі — привозимо зі складу постачальника після оформлення замовлення.
термін постачання:
31-40 дні (днів)
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Технічний опис RJP65T43DPM-00#T1 Renesas Electronics
Description: IGBT TRENCH 650V 40A TO-3PFM, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A, Supplier Device Package: TO-3PFM, IGBT Type: Trench, Td (on/off) @ 25°C: 30ns/107ns, Switching Energy: 170µJ (on), 110µJ (off), Test Condition: 400V, 20A, 10Ohm, 15V, Gate Charge: 70 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 68.8 W.
Інші пропозиції RJP65T43DPM-00#T1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
RJP65T43DPM-00#T1 | Renesas Electronics Corporation |
 Description: IGBT TRENCH 650V 40A TO-3PFMPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Supplier Device Package: TO-3PFM IGBT Type: Trench Td (on/off) @ 25°C: 30ns/107ns Switching Energy: 170µJ (on), 110µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 70 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 68.8 W |
товару немає в наявності |
В кошику од. на суму грн. |
| RJP65T43DPM-00#T1 |
|
Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 650V 40A TO-3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: TO-3PFM
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/107ns
Switching Energy: 170µJ (on), 110µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 68.8 W
Description: IGBT TRENCH 650V 40A TO-3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: TO-3PFM
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/107ns
Switching Energy: 170µJ (on), 110µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 68.8 W
товару немає в наявності
В кошику
од. на суму грн.