RM12N100S8 Rectron USA

Description: MOSFET N-CHANNEL 100V 12A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 50 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3.1W (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).