RM130N100HD Rectron USA

Description: MOSFET N-CH 100V 130A TO263-2, Input Capacitance (Ciss) (Max) @ Vds: 4570 pF @ 25 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263-2, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 120W (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).