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RM130N100T2

RM130N100T2 Rectron USA

rm130n100t2.pdf
Виробник: Rectron USA
Description: MOSFET N-CH 100V 130A TO220-3
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4570 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 120W (Tc)
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Мінімальне замовлення: 5000 шт
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Технічний опис RM130N100T2 Rectron USA

Description: MOSFET N-CH 100V 130A TO220-3, Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 4570 pF @ 25 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 120W (Tc).