RM25C512C-LSNI-T Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: IC CBRAM 512KBIT SPI 20MHZ 8SOIC
Write Cycle Time - Word, Page: 100µs, 5ms
Supplier Device Package: 8-SOIC
Memory Format: CBRAM®
Clock Frequency: 20 MHz
Technology: CBRAM
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 128 Bytes Page Size
Memory Interface: SPI
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Технічний опис RM25C512C-LSNI-T Renesas Electronics Corporation
Description: IC CBRAM 512KBIT SPI 20MHZ 8SOIC, Write Cycle Time - Word, Page: 100µs, 5ms, Supplier Device Package: 8-SOIC, Memory Format: CBRAM®, Clock Frequency: 20 MHz, Technology: CBRAM, Voltage - Supply: 1.65V ~ 3.6V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Non-Volatile, Memory Size: 512Kbit, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), DigiKey Programmable: Not Verified, Memory Organization: 128 Bytes Page Size, Memory Interface: SPI.
Інші пропозиції RM25C512C-LSNI-T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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RM25C512C-LSNI-T | Renesas Electronics Corporation |
Description: IC CBRAM 512KBIT SPI 20MHZ 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: CBRAM Clock Frequency: 20 MHz Memory Format: CBRAM® Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 100µs, 5ms Memory Interface: SPI Memory Organization: 128 Bytes Page Size DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. |
| RM25C512C-LSNI-T | Adesto Technologies |
 EEPROM 512K 1.65V EEPROM |
товару немає в наявності |
В кошику од. на суму грн. |
| RM25C512C-LSNI-T |
Виробник: Renesas Electronics Corporation
Description: IC CBRAM 512KBIT SPI 20MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: CBRAM
Clock Frequency: 20 MHz
Memory Format: CBRAM®
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 100µs, 5ms
Memory Interface: SPI
Memory Organization: 128 Bytes Page Size
DigiKey Programmable: Not Verified
Description: IC CBRAM 512KBIT SPI 20MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: CBRAM
Clock Frequency: 20 MHz
Memory Format: CBRAM®
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 100µs, 5ms
Memory Interface: SPI
Memory Organization: 128 Bytes Page Size
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| RM25C512C-LSNI-T |
|
Виробник: Adesto Technologies
EEPROM 512K 1.65V EEPROM
EEPROM 512K 1.65V EEPROM
товару немає в наявності
В кошику
од. на суму грн.