RM4N650TI Rectron USA
Виробник: Rectron USA
Description: MOSFET N-CHANNEL 650V 4A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 50 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 28.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
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Технічний опис RM4N650TI Rectron USA
Description: MOSFET N-CHANNEL 650V 4A TO220F, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 50 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Supplier Device Package: TO-220F, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 28.5W (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc).
Інші пропозиції RM4N650TI
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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RM4N650TI | Виробник : Rectron |
 MOSFETs TO-220F MOSFET |
товару немає в наявності |