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RM8810

RM8810 Rectron USA

rm8810.pdf
Виробник: Rectron USA
Description: MOSFET 2 N-CH 20V 7A SOT23-6
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 30000 шт
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Технічний опис RM8810 Rectron USA

Description: MOSFET 2 N-CH 20V 7A SOT23-6, Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V, Supplier Device Package: SOT-23-6, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 1.5W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-23-6, Packaging: Tape & Reel (TR).