RM8N650LD Rectron USA
Виробник: Rectron USA
Description: MOSFET N-CHANNEL 650V 8A TO252-2
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 50 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252-2
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Технічний опис RM8N650LD Rectron USA
Description: MOSFET N-CHANNEL 650V 8A TO252-2, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 50 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252-2, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 80W (Tc), Rds On (Max) @ Id, Vgs: 540mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).