RM8N650T2 Rectron USA
Виробник: Rectron USA
Description: MOSFET N-CHANNEL 650V 8A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 50 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Технічний опис RM8N650T2 Rectron USA
Description: MOSFET N-CHANNEL 650V 8A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 50 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 80W (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції RM8N650T2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| RM8N650T2 | Виробник : Rectron |
 MOSFETs MOSFET TO-220 |
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