RMD1N25ES9 Rectron USA

Description: MOSFET N-CHANNEL 25V 1.1A SOT363, Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: SOT-363-6L, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Power Dissipation (Max): 800mW (Ta), Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).