RMLV0414EGSB-4S2#HA1 Renesas Electronics America Inc
Виробник: Renesas Electronics America Inc
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
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Технічний опис RMLV0414EGSB-4S2#HA1 Renesas Electronics America Inc
Description: RMLV0414EGS - 4Mb Advanced LPSRA, Memory Format: SRAM, Technology: SRAM - Asynchronous, Voltage - Supply: 2.7V ~ 3.6V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 4Mbit, Mounting Type: Surface Mount, Package / Case: 44-TSOP (0.400", 10.16mm Width), Packaging: Bulk, Memory Organization: 256K x 16, Access Time: 45 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 45ns, Part Status: Active, Supplier Device Package: 44-TSOP II.
Інші пропозиції RMLV0414EGSB-4S2#HA1 за ціною від 422.11 грн до 558.18 грн
| Фото | Назва | Виробник | Інформація |
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| RMLV0414EGSB-4S2#HA1 | Виробник : Renesas Electronics |
SRAM SRAM SRAM LP(4M) 4M |
на замовлення 540 шт: термін постачання 21-30 дні (днів) |
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RMLV0414EGSB-4S2#HA1 | Виробник : Renesas Electronics America Inc |
Description: IC SRAM 4MBIT PARALLEL 44TSOP II Packaging: Tape & Reel (TR) Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: SRAM Memory Format: SRAM Supplier Device Package: 44-TSOP II Part Status: Active Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 256K x 16 |
товару немає в наявності |
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| RMLV0414EGSB-4S2#HA1 | Виробник : Rochester Electronics, LLC |
Description: RMLV0414EGS - 4Mb Advanced LPSRA Memory Format: SRAM Technology: SRAM - Asynchronous Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 4Mbit Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Packaging: Bulk Memory Organization: 256K x 16 Access Time: 45 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 45ns Part Status: Active Supplier Device Package: 44-TSOP II |
товару немає в наявності |