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RN1131MFV,L3F

RN1131MFV,L3F Toshiba Semiconductor and Storage

docget.jsp?did=727&prodName=RN1131MFV
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Resistors Included: R1 Only
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Мінімальне замовлення: 8000 шт
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Технічний опис RN1131MFV,L3F Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V 0.1A VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Supplier Device Package: VESM, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Resistor - Base (R1): 100 kOhms, Resistors Included: R1 Only.

Інші пропозиції RN1131MFV,L3F

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
RN1131MFV,L3F RN1131MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=727&prodName=RN1131MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Resistors Included: R1 Only
товару немає в наявності
В кошику  од. на суму  грн.
RN1131MFV,L3F RN1131MFV,L3F Toshiba 2BE8D9B5D1FFFEBC72E3763DBAEC7A3CFBE55EA8DE49E159B7D390CBAFBFCBD3.pdf Digital Transistors 100kohm 50V 0.1A SOT-723
товару немає в наявності
В кошику  од. на суму  грн.
RN1131MFV,L3F docget.jsp?did=727&prodName=RN1131MFV
RN1131MFV,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Resistors Included: R1 Only
товару немає в наявності
В кошику  од. на суму  грн.
RN1131MFV,L3F 2BE8D9B5D1FFFEBC72E3763DBAEC7A3CFBE55EA8DE49E159B7D390CBAFBFCBD3.pdf
RN1131MFV,L3F
Виробник: Toshiba
Digital Transistors 100kohm 50V 0.1A SOT-723
товару немає в наявності
В кошику  од. на суму  грн.