RN1307,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
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Технічний опис RN1307,LF Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR), Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 10 kOhms, Frequency - Transition: 250 MHz, Power - Max: 100 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: SC-70.
Інші пропозиції RN1307,LF за ціною від 2.81 грн до 16.16 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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RN1307,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A USM Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SC-70 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 250 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1307,LF | Toshiba |
Digital Transistors Bias Resistor NPN 100mA 50V 10kohm |
на замовлення 11766 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| RN1307,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Description: TRANS PREBIAS NPN 50V 0.1A USM
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.16 грн |
| 24+ | 12.60 грн |
| 100+ | 6.71 грн |
| 500+ | 4.14 грн |
| 1000+ | 2.81 грн |