RN1421TE85LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
| Кількість | Ціна |
|---|---|
| 10+ | 33.73 грн |
| 16+ | 20.02 грн |
| 100+ | 12.63 грн |
| 500+ | 8.87 грн |
| 1000+ | 7.91 грн |
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Технічний опис RN1421TE85LF Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.8A SMINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V, Supplier Device Package: S-Mini, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 300 MHz, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 1 kOhms.
Інші пропозиції RN1421TE85LF за ціною від 4.74 грн до 35.55 грн
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RN1421TE85LF | Виробник : Toshiba |
Digital Transistors NPN 50V 0.8A TRANSISTOR LOG |
на замовлення 4399 шт: термін постачання 21-30 дні (днів) |
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RN1421TE85LF | Виробник : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.8A SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 300 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms |
товару немає в наявності |