Інші пропозиції RN2603(TE85L,F) за ціною від 5.31 грн до 25.40 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RN2603(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2PNP 50V 100MA SM6Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: SM6 Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
RN2603(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2PNP 50V 100MA SM6Part Status: Active Supplier Device Package: SM6 Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) |
на замовлення 4985 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
RN2603(TE85L,F) | Toshiba |
Digital Transistors SM6 PLN (LF) TRANSISTOR Pd=300mW F=1MHz |
на замовлення 2980 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| RN2603(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA SM6
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Description: TRANS PREBIAS 2PNP 50V 100MA SM6
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.31 грн |
| RN2603(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA SM6
Part Status: Active
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS 2PNP 50V 100MA SM6
Part Status: Active
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
на замовлення 4985 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.40 грн |
| 20+ | 15.12 грн |
| 100+ | 9.50 грн |
| 500+ | 6.62 грн |
| 1000+ | 5.88 грн |
| RN2603(TE85L,F) |
![]() |
Виробник: Toshiba
Digital Transistors SM6 PLN (LF) TRANSISTOR Pd=300mW F=1MHz
Digital Transistors SM6 PLN (LF) TRANSISTOR Pd=300mW F=1MHz
на замовлення 2980 шт:
термін постачання 21-30 дні (днів)




