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RN2711,LF

RN2711,LF Toshiba Semiconductor and Storage

RN2711_datasheet_en_20191030.pdf?did=18905&prodName=RN2711 Виробник: Toshiba Semiconductor and Storage
Description: PNP X 2 BRT Q1BSR=10KOHM Q1BER=I
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: USV
Part Status: Active
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
14+22.12 грн
17+ 17.33 грн
100+ 9.17 грн
Мінімальне замовлення: 14
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Технічний опис RN2711,LF Toshiba Semiconductor and Storage

Description: PNP X 2 BRT Q1BSR=10KOHM Q1BER=I, Packaging: Tape & Reel (TR), Package / Case: 5-TSSOP, SC-70-5, SOT-353, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Frequency - Transition: 200MHz, Resistor - Base (R1): 10kOhms, Supplier Device Package: USV, Part Status: Active.

Інші пропозиції RN2711,LF

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
RN2711,LF RN2711,LF Виробник : Toshiba Semiconductor and Storage RN2711_datasheet_en_20191030.pdf?did=18905&prodName=RN2711 Description: PNP X 2 BRT Q1BSR=10KOHM Q1BER=I
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: USV
Part Status: Active
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