RN2905,LXHF(CT Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 17+ | 19.01 грн |
| 26+ | 12.05 грн |
| 100+ | 8.09 грн |
| 500+ | 5.84 грн |
| 1000+ | 5.25 грн |
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Технічний опис RN2905,LXHF(CT Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 200MHz, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: US6, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Інші пропозиції RN2905,LXHF(CT за ціною від 4.32 грн до 33.82 грн
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RN2905,LXHF(CT | Виробник : Toshiba |
Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-Sym) PNP x 2 , R1=2.2kOhm, R2=47kOhm, VCEO=-50V, IC=-0.1A (SOT-363) |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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RN2905,LXHF(CT | Виробник : Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |